The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2018
Filed:
Aug. 05, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Shesh Mani Pandey, Saratoga Springs, NY (US);
Baofu Zhu, Clifton Park, NY (US);
Srikanth Balaji Samavedam, Cohoes, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823481 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 27/0886 (2013.01);
Abstract
A method for producing a finFET having a fin with thinned sidewalls on a lower portion above a shallow trench isolation (STI) regions is provided. Embodiments include forming a fin surrounded by STI regions on a substrate; recessing the STI regions, revealing an upper portion of the fin; forming a spacer over side and upper surfaces of the upper portion of the fin; recessing the STI regions, exposing a lower portion of the fin; and thinning sidewalls of the lower portion of the fin.