logo

For the Inventor, By the Inventor

Fishkill, NY, United States of America

Srikanth Balaji Samavedam

This inventor holds 47 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Devices. Top assignees: Globalfoundries Inc., Freescale Semiconductor,inc., Motorola Corporation. Active years: 2001-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Srikanth Balaji Samavedam. Retrieved from https://idiyas.com/inventor/srikanth-balaji-samavedam

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 47 

% Patents Active = 76.6

Average Co-Inventor Count = 3.7

ph-index = 12

Forward Citations = 1,367(Granted Patents)


Location History:

  • Austin, TX (US) (2001 - 2016)
  • Fishkill, NY (US) (2008 - 2019)
  • Cohoes, NY (US) (2015 - 2022)

Company Filing History:

goldMedal21 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal18 out of 5,491 
 
Freescale Semiconductor,inc.
 patents
bronzeMedal4 out of 20,290 
 
Motorola Corporation
 patents
4. 3 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
5. 1 out of 166,351 
 
International Business Machines Corporation
 patents
6. 1 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2001-2022

Loading Chart...
Areas of Expertise:
FinFET
Transistor
Integrated Circuit
Semiconductor
CMOS
High Voltage
Schottky Diode
Dielectric Thickness
Epitaxial Growth
Gate Structure
Source Drain Regions
Dual Metal Gate
47 patents (USPTO):Explore Patents
1. 11462648 - Fin-based Schottky diode for integrated circuit (IC) products and methods of making such a Schottky diode (2022-10-04),
2. 11195947 - Semiconductor device with doped region adjacent isolation structure in extension region (2021-12-07),
3. 11127818 - High voltage transistor with fin source/drain regions and trench gate structure (2021-09-21),
4. 10644157 - Fin-type field effect transistors with uniform channel lengths and below-channel isolation on bulk semiconductor substrates and methods (2020-05-05),
5. 10483172 - Transistor device structures with retrograde wells in CMOS applications (2019-11-19),
6. 10347748 - Methods of forming source/drain regions on FinFET devices (2019-07-09),
7. 9966313 - FinFET device and method of manufacturing (2018-05-08),
8. 9935112 - SRAM cell having dual pass gate transistors and method of making the same (2018-04-03),
9. 9852954 - Methods of forming transistors with retrograde wells in CMOS applications and the resulting device structures (2017-12-26),
10. 9576952 - Integrated circuits with varying gate structures and fabrication methods (2017-02-21),
11. 9508743 - Dual three-dimensional and RF semiconductor devices using local SOI (2016-11-29),
12. 9455201 - Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits (2016-09-27),
13. 9437740 - Epitaxially forming a set of fins in a semiconductor device (2016-09-06),
14. 9362357 - Blanket EPI super steep retrograde well formation without Si recess (2016-06-07),
15. 9362280 - Semiconductor devices with different dielectric thicknesses (2016-06-07),

Title: Srikanth Balaji Samavedam: Pioneering Inventor from Fishkill, NY

Introduction: Srikanth Balaji Samavedam is a highly accomplished inventor based in Fishkill, NY, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Srikanth Balaji Samavedam holds several patents in the areas of artificial intelligence, machine learning, and renewable energy technologies, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Srikanth Balaji Samavedam has worked with leading tech companies, research institutions, and universities, playing a key role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Srikanth Balaji Samavedam has collaborated with top inventors, patent attorneys, and companies worldwide, fostering a culture of innovation and knowledge sharing that has led to numerous successful projects and inventions.

Conclusion: Srikanth Balaji Samavedam's passion for innovation, coupled with his technical expertise and collaborative spirit, continues to drive him towards creating impactful solutions that have the potential to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…