The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2016
Filed:
Feb. 25, 2014
Globalfoundries Inc., Grand Cayman, KY (US);
Manoj Joshi, Clifton Park, NY (US);
Manfred Eller, Beacon, NY (US);
Rohit Pal, Mechanicville, NY (US);
Richard J. Carter, Saratoga Springs, NY (US);
Srikanth Balaji Samavedam, Cohoes, NY (US);
Bongki Lee, Austin, TX (US);
Jin Ping Liu, Ballston Lake, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
In one aspect there is set forth herein a semiconductor device having a first field effect transistor formed in a substrate structure, and a second field effect transistor formed in the substrate structure. The first field effect transistor can include a first substrate structure doping, a first gate stack, and a first threshold voltage. The second field effect transistor can include the first substrate structure doping, a second gate stack different from the first gate stack, and a second threshold voltage different from the first threshold voltage.