IDiyas

For the Inventor, By the Inventor

Fishkill, NY, United States of America

Rohit Pal

USPTO Granted Patents = 45 

 

Average Co-Inventor Count = 3.1

ph-index = 10

Forward Citations = 718(Granted Patents)


Location History:

  • Ann Arbor, MI (US) (2007)
  • Hopewell Junction, NY (US) (2012)
  • Plainsboro, NJ (US) (2013)
  • Mahwah, NJ (US) (2013)
  • Dresden, DE (2014)
  • Fishkill, NY (US) (2009 - 2015)
  • Clifton Park, NY (US) (2012 - 2016)
  • Mechanicville, NY (US) (2015 - 2018)

Company Filing History:

goldMedal35 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal7 out of 12,867 
 
Advanced Micro Devices Corporation
 patents
bronzeMedal3 out of 3,370 
 
University of Michigan
 patents
4. 2 out of 164,108 
 
International Business Machines Corporation
 patents
where one patent can have more than one assignee

Years Active: 2007-2018

where 'Filed Patents' based on already Granted Patents

45 patents (USPTO):
1. 9875936 - Spacer defined fin growth and differential fin width (2018-01-23),
2. 9455201 - Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits (2016-09-27),
3. 9362284 - Threshold voltage control for mixed-type non-planar semiconductor devices (2016-06-07),
4. 9362180 - Integrated circuit having multiple threshold voltages (2016-06-07),
5. 9349814 - Gate height uniformity in semiconductor devices (2016-05-24),
6. 9209186 - Threshold voltage control for mixed-type non-planar semiconductor devices (2015-12-08),
7. 9159567 - Replacement low-K spacer (2015-10-13),
8. 9157551 - Reconfigurable microactuator and method of configuring same (2015-10-13),
9. 9093560 - Gate height uniformity in semiconductor devices (2015-07-28),
10. 8674458 - Transistors with embedded strain-inducing material formed in cavities provided by an oxidizing etch process (2014-03-18),
11. 8673710 - Formation of a channel semiconductor alloy by a nitride hard mask layer and an oxide mask (2014-03-18),
12. 8664066 - Formation of a channel semiconductor alloy by forming a nitride based hard mask layer (2014-03-04),
13. 8664057 - High-K metal gate electrode structures formed by early cap layer adaptation (2014-03-04),
14. 8598009 - Self-aligned embedded SiGe structure and method of manufacturing the same (2013-12-03),
15. 8551599 - Reconfigurable microactuator and method of configuring same (2013-10-08),

Title: Inventor Rohit Pal: Revolutionizing Technology in Fishkill, NY

Introduction: Rohit Pal is a visionary inventor based in Fishkill, NY, known for his groundbreaking contributions to the field of technology.

Latest Patents: Rohit Pal holds several patents in the areas of artificial intelligence, renewable energy, and biotechnology, showcasing his diverse range of expertise and innovation.

Career Highlights: With a career spanning over two decades, Rohit Pal has worked for leading tech companies, where he spearheaded research and development projects that have led to significant technological advancements.

Collaborations: Throughout his career, Rohit Pal has collaborated with top researchers, engineers, and scientists from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Rohit Pal's relentless pursuit of innovation and his passion for pushing the boundaries of technology make him a true pioneer in the field of inventions.

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