The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Nov. 10, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ryan Sporer, Mechanicville, NY (US);

Rohit Pal, Mechanicville, NY (US);

Jeremy Wahl, Delmar, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/304 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/31053 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 27/0886 (2013.01); H01L 27/0924 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01);
Abstract

Methods for forming fins with a straight profile by preventing fin bending during STI fill and annealing are disclosed. Embodiments include providing STI regions separated by Si regions, each topped with a hardmask; planarizing the STI regions; removing the hardmask over a portion of the Si regions, forming recesses; forming a conformal spacer layer over the STI regions and in the recesses; removing horizontal portions of the spacer layer; epitaxially growing Si in each recess, forming fins; and etching the STI regions and a remainder of the spacer layer down to the Si regions to reveal the fins.


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