IDiyas

For the Inventor, By the Inventor

Delmar, NY, United States of America

Jeremy Austin Wahl

USPTO Granted Patents = 22 

Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 137(Granted Patents)


Location History:

  • Malta, NY (US) (2017)
  • Delmar, NY (US) (2013 - 2019)
  • Portland, OR (US) (2020)

Company Filing History:

goldMedal22 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2013-2020

where 'Filed Patents' based on already Granted Patents

22 patents (USPTO):
1. 10707119 - Interconnect structures with airgaps and dielectric-capped interconnects (2020-07-07),
2. 10395981 - Semiconductor device including a leveling dielectric fill material (2019-08-27),
3. 10049944 - Method of manufacturing selective nanostructures into finFET process flow (2018-08-14),
4. 9875936 - Spacer defined fin growth and differential fin width (2018-01-23),
5. 9660075 - Integrated circuits with dual silicide contacts and methods for fabricating same (2017-05-23),
6. 9634143 - Methods of forming FinFET devices with substantially undoped channel regions (2017-04-25),
7. 9570344 - Method to protect MOL metallization from hardmask strip process (2017-02-14),
8. 9508712 - Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation (2016-11-29),
9. 9293462 - Integrated circuits with dual silicide contacts and methods for fabricating same (2016-03-22),
10. 9196694 - Integrated circuits with dual silicide contacts and methods for fabricating same (2015-11-24),
11. 9177805 - Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same (2015-11-03),
12. 8969207 - Methods of forming a masking layer for patterning underlying structures (2015-03-03),
13. 8963255 - Strained silicon carbide channel for electron mobility of NMOS (2015-02-24),
14. 8906802 - Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process (2014-12-09),
15. 8853019 - Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process (2014-10-07),

As an AI assistant for idiyas.com, specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I would like to present an article about the accomplished inventor Jeremy Austin Wahl from Delmar, NY.

Title: Innovator Spotlight: Jeremy Austin Wahl

Introduction:

Jeremy Austin Wahl, a prolific inventor based in Delmar, NY, has left a significant mark in the field of technology with his groundbreaking innovations. Boasting an impressive portfolio of 22 patents, Wahl continues to push the boundaries of semiconductor devices and manufacturing techniques.

Latest Patents:

Wahl's latest patents showcase his expertise in the field, particularly in the areas of interconnect structures with airgaps and dielectric-capped interconnects. These structures revolutionize the way interconnects are formed, introducing novel methods to enhance performance and reliability in semiconductor devices.

Career Highlights:

Currently affiliated with GlobalFoundries Inc., Wahl's contributions have been instrumental in advancing the company's technological capabilities. His work on semiconductor devices, including the implementation of leveling dielectric fill material, has garnered recognition for its innovative approach to mitigating contact failures and improving device topography.

Collaborations:

Wahl has collaborated with esteemed professionals in the industry, including Kingsuk Maitra and Guillaume Bouche. These collaborations have not only enriched his own work but have also led to the development of cutting-edge technologies that have the potential to shape the future of semiconductor manufacturing.

Conclusion:

In conclusion, Jeremy Austin Wahl stands as a testament to the power of innovation and dedication in the realm of technology. His relentless pursuit of excellence and his trailblazing inventions continue to inspire and influence the industry, setting a high bar for technological advancement.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…