Jeremy Austin Wahl

This inventor holds 22 USPTO granted patents and 3 published patent applications, primarily in FinFET Technology. Top assignee: Globalfoundries Inc.. Active years: 2013-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jeremy Austin Wahl. Retrieved from https://idiyas.com/inventor/jeremy-austin-wahl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 22 (Patent Applications = 3)

% Patents Active = 63.6

Average Co-Inventor Count = 2.6

ph-index = 6

Forward Citations = 140(Granted Patents)

Location History:

Malta, NY (US) (2017)
Delmar, NY (US) (2013 - 2019)
Portland, OR (US) (2020)

Company Filing History:

22 out of 5,671

Globalfoundries Inc.

patents

Years Active: 2013-2020

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Areas of Expertise:

FinFET

Integrated Circuits

Nanowire Channel

Dielectric Fill

Silicide Contacts

Strained Silicon Carbide

Masking Layer

Epitaxial Growth

Current Density Modulation

Trench Features

Channel Mobility

Differential Fin Width

22 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10707119 - Interconnect structures with airgaps and dielectric-capped interconnects (2020-07-07),

2. 10395981 - Semiconductor device including a leveling dielectric fill material (2019-08-27),

3. 10049944 - Method of manufacturing selective nanostructures into finFET process flow (2018-08-14),

4. 9875936 - Spacer defined fin growth and differential fin width (2018-01-23),

5. 9660075 - Integrated circuits with dual silicide contacts and methods for fabricating same (2017-05-23),

6. 9634143 - Methods of forming FinFET devices with substantially undoped channel regions (2017-04-25),

7. 9570344 - Method to protect MOL metallization from hardmask strip process (2017-02-14),

8. 9508712 - Semiconductor device with a multiple nanowire channel structure and methods of variably connecting such nanowires for current density modulation (2016-11-29),

9. 9293462 - Integrated circuits with dual silicide contacts and methods for fabricating same (2016-03-22),

10. 9196694 - Integrated circuits with dual silicide contacts and methods for fabricating same (2015-11-24),

11. 9177805 - Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same (2015-11-03),

12. 8969207 - Methods of forming a masking layer for patterning underlying structures (2015-03-03),

13. 8963255 - Strained silicon carbide channel for electron mobility of NMOS (2015-02-24),

14. 8906802 - Methods of forming trench/via features in an underlying structure using a process that includes a masking layer formed by a directed self-assembly process (2014-12-09),

15. 8853019 - Methods of forming a semiconductor device with a nanowire channel structure by performing an anneal process (2014-10-07),

As an AI assistant for idiyas.com, specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I would like to present an article about the accomplished inventor Jeremy Austin Wahl from Delmar, NY.

Title: Innovator Spotlight: Jeremy Austin Wahl

Introduction:

Jeremy Austin Wahl, a prolific inventor based in Delmar, NY, has left a significant mark in the field of technology with his groundbreaking innovations. Boasting an impressive portfolio of 22 patents, Wahl continues to push the boundaries of semiconductor devices and manufacturing techniques.

Latest Patents:

Wahl's latest patents showcase his expertise in the field, particularly in the areas of interconnect structures with airgaps and dielectric-capped interconnects. These structures revolutionize the way interconnects are formed, introducing novel methods to enhance performance and reliability in semiconductor devices.

Career Highlights:

Currently affiliated with GlobalFoundries Inc., Wahl's contributions have been instrumental in advancing the company's technological capabilities. His work on semiconductor devices, including the implementation of leveling dielectric fill material, has garnered recognition for its innovative approach to mitigating contact failures and improving device topography.

Collaborations:

Wahl has collaborated with esteemed professionals in the industry, including Kingsuk Maitra and Guillaume Bouche. These collaborations have not only enriched his own work but have also led to the development of cutting-edge technologies that have the potential to shape the future of semiconductor manufacturing.

Conclusion:

In conclusion, Jeremy Austin Wahl stands as a testament to the power of innovation and dedication in the realm of technology. His relentless pursuit of excellence and his trailblazing inventions continue to inspire and influence the industry, setting a high bar for technological advancement.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: