The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 27, 2019
Filed:
Oct. 25, 2017
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Hans-Peter Moll, Dresden, DE;
Jeremy Austin Wahl, Delmar, NY (US);
Assignee:
GLOBALFOUNDRIES Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/28 (2006.01); H01L 29/66 (2006.01); H01L 29/04 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76822 (2013.01); H01L 21/28052 (2013.01); H01L 21/76814 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76852 (2013.01); H01L 21/76867 (2013.01); H01L 21/76883 (2013.01); H01L 29/045 (2013.01); H01L 29/66507 (2013.01);
Abstract
The present disclosure relates to semiconductor devices and manufacturing techniques in which topography-related contact failures may be reduced by providing a dielectric fill material in a late manufacturing stage. In sophisticated semiconductor devices, the material loss in the trench isolation regions may result in significant contact failures, which may be reduced by levelling the device topography, thereby tolerating a significant lateral overlap of contact elements with trench isolation regions.