The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 24, 2015
Filed:
Oct. 01, 2013
Globalfoundries, Inc., Grand Cayman, KY;
Guillaume Bouche, Albany, NY (US);
Shao Ming Koh, Clifton Park, NY (US);
Jeremy A. Wahl, Delmar, NY (US);
Andy Wei, Queensbury, NY (US);
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Abstract
Integrated circuits with dual silicide contacts and methods for fabricating integrated circuits with dual silicide contacts are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate having PFET areas and NFET areas. The method selectively forms first silicide contacts from a first metal in the PFET areas. Further, the method selectively forms second silicide contacts from a second metal in the NFET areas. The second metal is different from the first metal.