Company Filing History:

9 out of 5,671

Globalfoundries Inc.

where one patent can have more than one assignee

Years Active: 2014-2016

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9 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9472465 - Methods of fabricating integrated circuits (2016-10-18),

2. 9455201 - Integration method for fabrication of metal gate based multiple threshold voltage devices and circuits (2016-09-27),

3. 9362180 - Integrated circuit having multiple threshold voltages (2016-06-07),

4. 9287180 - Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same (2016-03-15),

5. 9196475 - Methods for fabricating integrated circuits including fluorine incorporation (2015-11-24),

6. 9165767 - Semiconductor structure with increased space and volume between shaped epitaxial structures (2015-10-20),

7. 9093476 - Integrated circuits having FinFETs with improved doped channel regions and methods for fabricating same (2015-07-28),

8. 9059218 - Reducing gate expansion after source and drain implant in gate last process (2015-06-16),

9. 8912085 - Method and apparatus for adjusting threshold voltage in a replacement metal gate integration (2014-12-16),

Title: The Innovative Contributions of Bongki Lee

Introduction

Bongki Lee is a prominent inventor based in Malta, NY (US), known for his significant contributions to the field of integrated circuits. With a total of nine patents to his name, Lee has made remarkable advancements in semiconductor technology.

Latest Patents

Among his latest patents, Lee has developed methods for fabricating integrated circuits. One such method involves forming a first FET trench in a first FET region and a second FET trench in a second FET region of an interlayer dielectric material on a semiconductor substrate. This process includes at least partially filling the trenches with a work function metal to create a work function metal layer, followed by the partial removal of this layer in the second FET trench. The first trench is designated as an NFET trench, while the second is defined as a PFET trench. Another notable patent focuses on the integration method for the fabrication of metal gate-based multiple threshold voltage devices and circuits. This innovation features a semiconductor device with two field effect transistors, each having distinct gate stacks and threshold voltages.

Career Highlights

Bongki Lee has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and Intermolecular, Inc. His experience in these organizations has allowed him to refine his expertise and contribute to groundbreaking technologies in integrated circuit fabrication.

Collaborations

Throughout his career, Lee has collaborated with notable professionals in the field, including Bharat V Krishnan and Jinping Liu. These partnerships have further enhanced his innovative capabilities and expanded the impact of his work.

Conclusion

Bongki Lee's contributions to the field of integrated circuits through his patents and collaborations highlight his role as a key innovator in semiconductor technology. His work continues to influence advancements in the industry, showcasing the importance of innovation in shaping the future of electronics.

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