The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2014
Filed:
Sep. 04, 2013
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Bongki Lee, Malta, NY (US);
Bharat V. Krishnan, Clifton Park, NY (US);
Jinping Liu, Hopewell Junction, NY (US);
Assignee:
GlobalFoundries Inc., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 21/02 (2006.01); H01L 29/49 (2006.01); H01L 21/283 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/49 (2013.01); H01L 21/283 (2013.01); H01L 29/4966 (2013.01); H01L 21/823842 (2013.01);
Abstract
A methodology for enabling a gate stack integration process that provides additional threshold voltage margin without sacrificing gate reliability and the resulting device are disclosed. Embodiments include conformally forming a margin adjusting layer in a gate trench, forming a metal capping layer on the margin adjusting layer, and forming an n-type work function (nWF) metal layer on the metal capping layer.