Mechanicville, NY, United States of America

Bharat V Krishnan

This inventor holds 19 USPTO granted patents and 13 published patent applications, primarily in FinFET Technology. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2014-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bharat V Krishnan. Retrieved from https://idiyas.com/inventor/bharat-v-krishnan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 19 

% Patents Active = 68.4

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 41(Granted Patents)


Location History:

  • Clifton Park, NY (US) (2014 - 2018)
  • Mechanicville, NY (US) (2015 - 2022)

Company Filing History:


Years Active: 2014-2022

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Areas of Expertise:
FinFET
Threshold Voltage
Parasitic Resistance
Semiconductor Structure
Integrated Circuits
Doping Techniques
Microwave Annealing
Flowable Oxides
Trench Isolation
Strained Channels
Siloxane Patterning
Source/Drain Regions
19 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Bharat V Krishnan

Introduction

Bharat V Krishnan, based in Mechanicville, NY, is an accomplished inventor with a total of 19 patents to his name. His work primarily focuses on semiconductor technology, contributing significant advancements in the field through innovative designs and methods.

Latest Patents

Among his latest patents is the invention of a fin-type field effect transistor with reduced fin bulge. This invention discloses a method of forming a fin-type field effect transistor (FINFET) and a FINFET structure. The method involves creating isolation regions on opposing sides of a semiconductor fin. Each isolation area is shorter than the fin and includes features that minimize degradation of gate control over the channel region by addressing the issue of non-uniform fin width.

Another notable patent pertains to multiple threshold voltage devices. This patent relates to semiconductor structures and introduces methods of manufacture that include a gate dielectric material and gate material with varying thicknesses. Each thickness is structured for devices with different threshold voltages, enhancing the functionality and versatility of semiconductor devices.

Career Highlights

Bharat has made significant contributions while working at leading companies such as Globalfoundries Inc. and Globalfoundries U.S. Inc. His expertise and innovative spirit have allowed him to remain at the forefront of semiconductor research and development.

Collaborations

Throughout his career, Bharat has collaborated with notable colleagues like Jinping Liu and Bongki Lee. These partnerships have fostered a collaborative environment in which groundbreaking technologies have been developed and advanced.

Conclusion

Bharat V Krishnan has made remarkable contributions to the field of semiconductor technology through his extensive patent portfolio and collaborative efforts. His innovative approach continues to influence the industry, paving the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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