IDiyas

For the Inventor, By the Inventor

Mechanicville, NY, United States of America

Bharat V Krishnan

USPTO Granted Patents = 19 

Average Co-Inventor Count = 4.0

ph-index = 3

Forward Citations = 39(Granted Patents)


Location History:

  • Clifton Park, NY (US) (2014 - 2018)
  • Mechanicville, NY (US) (2015 - 2022)

Company Filing History:

goldMedal17 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2014-2022

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):
1. 11264382 - Fin-type field effect transistor with reduced fin bulge and method (2022-03-01),
2. 11094598 - Multiple threshold voltage devices (2021-08-17),
3. 10886178 - Device with highly active acceptor doping and method of production thereof (2021-01-05),
4. 10811411 - Fin-type field effect transistor with reduced fin bulge and method (2020-10-20),
5. 10312150 - Protected trench isolation for fin-type field-effect transistors (2019-06-04),
6. 10211045 - Microwave annealing of flowable oxides with trap layers (2019-02-19),
7. 10134876 - FinFETs with strained channels and reduced on state resistance (2018-11-20),
8. 10121706 - Semiconductor structure including two-dimensional and three-dimensional bonding materials (2018-11-06),
9. 10062692 - Field effect transistors with reduced parasitic resistances and method (2018-08-28),
10. 10056458 - Siloxane and organic-based MOL contact patterning (2018-08-21),
11. 9882052 - Forming defect-free relaxed SiGe fins (2018-01-30),
12. 9640423 - Integrated circuits and methods for their fabrication (2017-05-02),
13. 9559166 - Fabricating transistors having resurfaced source/drain regions with stressed portions (2017-01-31),
14. 9472465 - Methods of fabricating integrated circuits (2016-10-18),
15. 9287180 - Integrated circuits having finFETs with improved doped channel regions and methods for fabricating same (2016-03-15),

Title: Innovations and Contributions of Bharat V Krishnan

Introduction

Bharat V Krishnan, based in Mechanicville, NY, is an accomplished inventor with a total of 19 patents to his name. His work primarily focuses on semiconductor technology, contributing significant advancements in the field through innovative designs and methods.

Latest Patents

Among his latest patents is the invention of a fin-type field effect transistor with reduced fin bulge. This invention discloses a method of forming a fin-type field effect transistor (FINFET) and a FINFET structure. The method involves creating isolation regions on opposing sides of a semiconductor fin. Each isolation area is shorter than the fin and includes features that minimize degradation of gate control over the channel region by addressing the issue of non-uniform fin width.

Another notable patent pertains to multiple threshold voltage devices. This patent relates to semiconductor structures and introduces methods of manufacture that include a gate dielectric material and gate material with varying thicknesses. Each thickness is structured for devices with different threshold voltages, enhancing the functionality and versatility of semiconductor devices.

Career Highlights

Bharat has made significant contributions while working at leading companies such as Globalfoundries Inc. and Globalfoundries U.S. Inc. His expertise and innovative spirit have allowed him to remain at the forefront of semiconductor research and development.

Collaborations

Throughout his career, Bharat has collaborated with notable colleagues like Jinping Liu and Bongki Lee. These partnerships have fostered a collaborative environment in which groundbreaking technologies have been developed and advanced.

Conclusion

Bharat V Krishnan has made remarkable contributions to the field of semiconductor technology through his extensive patent portfolio and collaborative efforts. His innovative approach continues to influence the industry, paving the way for future advancements in technology.

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