The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 05, 2021
Filed:
Aug. 22, 2018
Globalfoundries Inc., Grand Cayman, KY;
Tek Po Rinus Lee, Malta, NY (US);
Annie Levesque, Saratoga Springs, NY (US);
Qun Gao, Clifton Park, NY (US);
Hui Zang, Guilderland, NY (US);
Rishikesh Krishnan, Cohoes, NY (US);
Bharat Krishnan, Mechanicville, NY (US);
Curtis Durfee, Guilderland, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A device including a triple-layer EPI stack including SiGe, Ge, and Si, respectively, with Ga confined therein, and method of production thereof. Embodiments include an EPI stack including a SiGe layer, a Ge layer, and a Si layer over a plurality of fins, the EPI stack positioned between and over a portion of sidewall spacers, wherein the Si layer is a top layer capping the Ge layer, and wherein the Ge layer is a middle layer capping the SiGe layer underneath; and a Ga layer in a portion of the Ge layer between the SiGe layer and the Si layer.