IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Qun Gao

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.5

ph-index = 1

Forward Citations = 33(Granted Patents)


Company Filing History:

goldMedal10 out of 5,671 
 
Globalfoundries Inc.
 patents

Years Active: 2018-2021

where 'Filed Patents' based on already Granted Patents

10 patents (USPTO):
1. 10886178 - Device with highly active acceptor doping and method of production thereof (2021-01-05),
2. 10832965 - Fin reveal forming STI regions having convex shape between fins (2020-11-10),
3. 10727133 - Method of forming gate structure with undercut region and resulting device (2020-07-28),
4. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),
5. 10593555 - Composite sacrificial gate with etch selective layer (2020-03-17),
6. 10529831 - Methods, apparatus, and system for forming epitaxial formations with reduced risk of merging (2020-01-07),
7. 10453754 - Diffused contact extension dopants in a transistor device (2019-10-22),
8. 10269932 - Asymmetric formation of epi semiconductor material in source/drain regions of FinFET devices (2019-04-23),
9. 10256152 - Methods of making FinFET device comprising a piezoelectric liner for generating a surface charge (2019-04-09),
10. 10014364 - On-chip resistors with a tunable temperature coefficient of resistance (2018-07-03),

Title: Innovations of Qun Gao in Semiconductor Technology

Introduction

Qun Gao is a prominent inventor based in Clifton Park, NY (US), known for his significant contributions to semiconductor technology. With a total of 10 patents to his name, Gao has been instrumental in advancing the field through innovative designs and methods.

Latest Patents

One of his latest patents is titled "Device with highly active acceptor doping and method of production thereof." This invention includes a device featuring a triple-layer EPI stack composed of SiGe, Ge, and Si, with Ga confined within. The EPI stack is strategically positioned between and over a portion of sidewall spacers, with the Si layer serving as the top layer capping the Ge layer, which in turn caps the SiGe layer underneath. Additionally, there is a Ga layer integrated within the Ge layer, enhancing the device's functionality. Another notable patent is "Fin reveal forming STI regions having convex shape between fins." This patent describes integrated circuit devices that utilize trenches in a material layer to create fins. The design includes an insulator that partially fills the trenches and contacts the material layer, resulting in a convex dome shape on the top surface of the insulator between the fins.

Career Highlights

Qun Gao has made remarkable strides in his career, particularly through his work at Globalfoundries Inc. His expertise in semiconductor fabrication and design has positioned him as a key player in the industry. His innovative approaches have not only led to numerous patents but have also contributed to the advancement of semiconductor technologies.

Collaborations

Gao has collaborated with several talented individuals in his field, including Ankur Arya and Naved Ahmed Siddiqui. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Qun Gao's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His work continues to shape the future of the industry, making significant impacts on technology and innovation.

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