The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 17, 2020
Filed:
Mar. 20, 2018
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Qun Gao, Clifton Park, NY (US);
Naved Siddiqui, Latham, NY (US);
Ankur Arya, Saratoga Springs, NY (US);
John R Sporre, Cohoes, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 21/31116 (2013.01); H01L 21/0332 (2013.01); H01L 21/31055 (2013.01); H01L 21/31144 (2013.01); H01L 21/76224 (2013.01); H01L 21/76865 (2013.01); H01L 29/66545 (2013.01);
Abstract
The manufacture of a FinFET device includes the formation of a composite sacrificial gate. The composite sacrificial gate includes a sacrificial gate layer such as a layer of amorphous silicon, and an etch selective layer such as a layer of silicon germanium. The etch selective layer, which underlies the sacrificial gate layer, enables the formation of a gate cut opening having a controlled critical dimension that extends through the composite sacrificial gate.