Sunnyvale, CA, United States of America

Naved Ahmed Siddiqui

USPTO Granted Patents = 7 

Average Co-Inventor Count = 4.1

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Malta, NY (US) (2018 - 2020)
  • Latham, NY (US) (2020)
  • Sunnyvale, CA (US) (2021 - 2024)

Company Filing History:


Years Active: 2018-2024

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):

Title: Naved Ahmed Siddiqui: Innovator in Electronic Device Technology

Introduction

Naved Ahmed Siddiqui is a prominent inventor based in Sunnyvale, CA, known for his significant contributions to the field of electronic devices. With a total of seven patents to his name, Siddiqui has made remarkable advancements in the technology surrounding gate-all-around (GAA) structures.

Latest Patents

His latest patents focus on methods for GAA I/O formation by selective epitaxial regrowth. These patents describe electronic devices and methods for forming electronic devices that incorporate gate-all-around non-I/O devices and finlike structures for I/O devices. The process involves etching a plurality of dummy gates to expose a fin made up of alternating layers of a first material and a second material. The second material layers are then removed to create openings, allowing the remaining first material layers to be epitaxially grown, resulting in a finlike structure.

Career Highlights

Throughout his career, Naved Ahmed Siddiqui has worked with notable companies such as GlobalFoundries Inc. and Applied Materials, Inc. His expertise in electronic device technology has positioned him as a key player in the industry.

Collaborations

Siddiqui has collaborated with esteemed colleagues, including Qun Gao and Daniel J. Jaeger, further enhancing his contributions to the field.

Conclusion

Naved Ahmed Siddiqui's innovative work in electronic devices and his numerous patents highlight his significant impact on technology. His ongoing contributions continue to shape the future of electronic device development.

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