The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2022
Filed:
Oct. 22, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Benjamin Colombeau, San Jose, CA (US);
Matthias Bauer, Sunnyvale, CA (US);
Naved Ahmed Siddiqui, Sunnyvale, CA (US);
Phillip Stout, Santa Clara, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66742 (2013.01); H01L 21/02532 (2013.01); H01L 21/02538 (2013.01); H01L 21/02603 (2013.01); H01L 21/02636 (2013.01); H01L 21/823807 (2013.01); H01L 21/823828 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66522 (2013.01); H01L 29/66545 (2013.01); H01L 29/78696 (2013.01);
Abstract
Electronic devices and methods of forming electronic devices with gate-all-around non-I/O devices and finlike structures for I/O devices are described. A plurality of dummy gates is etched to expose a fin comprising alternating layers of a first material and a second material. The second material layers are removed to create openings and the first material layers remaining are epitaxially grown to form a finlike structure.