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For the Inventor, By the Inventor

Sunnyvale, CA, United States of America

Matthias Bauer

LinkedIn
USPTO Granted Patents = 14 

Average Co-Inventor Count = 2.3

ph-index = 3

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal14 out of 13,684 
 
Applied Materials, Inc.
 patents

Years Active: 2016-2024

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14 patents (USPTO):
1. 12091749 - Method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet and flowing a purge gas from a lower gas inlet to a lower gas outlet (2024-09-17),
2. 12060651 - Chamber architecture for epitaxial deposition and advanced epitaxial film applications (2024-08-13),
3. 12027607 - Methods for GAA I/O formation by selective epi regrowth (2024-07-02),
4. 12018372 - Gas injector for epitaxy and CVD chamber (2024-06-25),
5. 11537151 - Multi-channel flow ratio controller and processing chamber (2022-12-27),
6. 11393916 - Methods for GAA I/O formation by selective epi regrowth (2022-07-19),
7. 11309404 - Integrated CMOS source drain formation with advanced control (2022-04-19),
8. 10964544 - Contact integration and selective silicide formation methods (2021-03-30),
9. 10691145 - Multi-channel flow ratio controller and processing chamber (2020-06-23),
10. 10483355 - Forming non-line-of-sight source drain extension in an NMOS FINFET using n-doped selective epitaxial growth (2019-11-19),
11. 10312096 - [object Object] (2019-06-04),
12. 10103028 - Contact integration and selective silicide formation methods (2018-10-16),
13. 9853129 - Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth (2017-12-26),
14. 9455143 - Atomic layer epitaxy for semiconductor gate stack layer for advanced channel devices (2016-09-27),

Title: Matthias Bauer: Innovator in Epitaxial Deposition Technologies

Introduction

Matthias Bauer is a prominent inventor based in Sunnyvale, California, known for his significant contributions to the field of semiconductor technology. With a total of 14 patents to his name, he has made remarkable advancements in epitaxial deposition processes.

Latest Patents

Bauer's latest patents include a method for epitaxially depositing a material on a substrate by flowing a process gas across the substrate from an upper gas inlet to an upper gas outlet, while simultaneously flowing a purge gas from a lower gas inlet to a lower gas outlet. This innovative method enhances the efficiency of epitaxial deposition processes. Another notable patent involves a chamber architecture for epitaxial deposition and advanced epitaxial film applications. This process chamber is designed for the processing of semiconductor substrates and includes various components such as upper and lower lamp assemblies, a substrate support, and gas injectors, all aimed at optimizing the deposition process.

Career Highlights

Matthias Bauer is currently employed at Applied Materials, Inc., a leading company in the semiconductor industry. His work focuses on developing advanced technologies that improve the performance and efficiency of semiconductor manufacturing processes.

Collaborations

Throughout his career, Bauer has collaborated with notable colleagues, including Benjamin Colombeau and Swaminathan T Srinivasan. These collaborations have contributed to the advancement of innovative solutions in the semiconductor field.

Conclusion

Matthias Bauer's contributions to epitaxial deposition technologies have significantly impacted the semiconductor industry. His innovative patents and collaborative efforts continue to drive advancements in this critical field.

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