The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2019
Filed:
Dec. 05, 2017
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Hua Chung, San Jose, CA (US);
Matthias Bauer, Sunnyvale, CA (US);
Schubert S. Chu, San Francisco, CA (US);
Satheesh Kuppurao, San Jose, CA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); H01L 29/167 (2006.01); H01L 29/45 (2006.01); H01L 21/3205 (2006.01); H01L 21/324 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/165 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/285 (2013.01); H01L 21/324 (2013.01); H01L 21/32053 (2013.01); H01L 29/167 (2013.01); H01L 29/456 (2013.01); H01L 29/665 (2013.01); H01L 21/02043 (2013.01); H01L 21/02532 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/7833 (2013.01); H01L 29/7848 (2013.01);
Abstract
The present disclosure generally relates to methods of selectively forming titanium silicides on substrates. The methods are generally utilized in conjunction with contact structure integration schemes. In one embodiment, a titanium silicide material is selectively formed on a substrate as an interfacial layer on a source/drain region. The titanium silicide layer may be formed at a temperature within range of about 400 degrees Celsius to about 500 degrees Celsius.