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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10964544 B1

PDFFull Text
Date of Patent:
Mar. 30, 2021

Filed:

Oct. 12, 2018

Contact integration and selective silicide formation methods

Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventor:

Matthias Bauer, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:

Patterson + Sheridan, LLP

Primary Examiner:

Hoa B Trinh

Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/285 (2006.01); H01L 29/786 (2006.01); H01L 29/423 (2006.01); H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/28518 (2013.01); H01L 21/02068 (2013.01); H01L 21/28562 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823821 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/42392 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H01L 21/76843 (2013.01);
Abstract

Methods for selective silicide formation are described herein. The methods are generally utilized in conjunction with contact structure integration schemes and provide for improved silicide formation characteristics. In one implementation, a silicide material is selectively formed on source/drain (S/D) regions at a temperature less than about 550° C. The resulting silicide is believed to exhibit desirable contact resistance and applicability in advanced contact integration schemes.

Find Patent Forward Citations

Bauer, Matthias. (2021). Contact integration and selective silicide formation methods (U.S. Patent No. 10964544). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10964544

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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