The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 26, 2017
Filed:
Aug. 19, 2016
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Matthias Bauer, Sunnyvale, CA (US);
Hans-Joachim Ludwig Gossmann, Summit, NJ (US);
Benjamin Colombeau, Salem, MA (US);
Assignee:
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/26 (2006.01); H01L 29/167 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/02439 (2013.01); H01L 21/02576 (2013.01); H01L 21/02645 (2013.01); H01L 21/02658 (2013.01); H01L 21/30604 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/167 (2013.01); H01L 29/26 (2013.01); H01L 29/6656 (2013.01); H01L 29/7851 (2013.01); H01L 21/02447 (2013.01); H01L 29/1608 (2013.01); H01L 29/20 (2013.01); H01L 29/66636 (2013.01);
Abstract
A finFET device includes an n-doped source and/or drain extension that is disposed between a gate spacer of the finFET and a bulk semiconductor portion of the semiconductor substrate on which the n-doped source or drain extension is disposed. The n-doped source or drain extension is formed by a selective epitaxial growth (SEG) process in a cavity formed proximate the gate spacer.