logo

For the Inventor, By the Inventor

Albany, NY, United States of America

John Ryan Sporre

This inventor holds 94 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices (CPC class H01L29-66795). Top assignees: International Business Machines Corporation, Adeia Semiconductor Bonding Technologies Inc., Globalfoundries Inc.. Active years: 2015-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: John Ryan Sporre. Retrieved from https://idiyas.com/inventor/john-ryan-sporre

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 94 

% Patents Active = 69.1

Average Co-Inventor Count = 5.2

ph-index = 9

Forward Citations = 467(Granted Patents)

Forward Citations (Not Self Cited) = 398(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Cohoes, NY (US) (2019 - 2020)
  • Albany, NY (US) (2015 - 2024)

Company Filing History:

goldMedal83 out of 166,409 
 
International Business Machines Corporation
 patents
silverMedal6 out of 1,909 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
bronzeMedal2 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 1 out of 52 
 
Elpis Technologies Inc.
 patents
5. 1 out of 1 
 
Terresa, Inc.
 patent
6. 1 out of 2,432 
 
University of Illinois
 patents

Years Active: 2015-2025

Loading Chart...
Areas of Expertise:
Physical Unclonable Function
Semiconductor Device
FinFET
VTFET
Nanosheet Isolation
Air Gap Spacer
Gate Cut Fabrication
Magnetic Tunnel Junctions
Stacked Nanowire
Sacrificial Gates
SOI Isolation
High Aspect Ratio
94 patents (USPTO):Explore Patents
1. 12327798 - Physical unclonable function (2025-06-10),
2. 11869937 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
3. 11869936 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
4. 11652161 - Nanosheet channel-to-source and drain isolation (2023-05-16),
5. 11646235 - Vertical tunneling field effect transistor with dual liner bottom spacer (2023-05-09),
6. 11615992 - Substrate isolated VTFET devices (2023-03-28),
7. 11557589 - Air gap spacer for metal gates (2023-01-17),
8. 11462631 - Sublithography gate cut physical unclonable function (2022-10-04),
9. 11315922 - Fin cut to prevent replacement gate collapse on STI (2022-04-26),
10. 11239316 - Semiconductor device and method of forming the semiconductor device (2022-02-01),
11. 11183389 - Fin field effect transistor devices with self-aligned gates (2021-11-23),
12. 11152266 - Vertical tunneling field effect transistor with dual liner bottom spacer (2021-10-19),
13. 11127815 - Semiconductor device and method of forming the semiconductor device (2021-09-21),
14. 11043581 - Nanosheet channel-to-source and drain isolation (2021-06-22),
15. 11024715 - FinFET gate cut after dummy gate removal (2021-06-01),

Title: The Inventive Journey of John Ryan Sporre

Introduction:

John Ryan Sporre, a prolific inventor with a sharp mind and a passion for innovation, hails from Albany, NY (US). With an impressive track record of 93 patents to his name, he is a driving force in the world of semiconductor technology.

Latest Patents:

Among his latest patents is a groundbreaking "Semiconductor device and method of forming the semiconductor device." This innovation features a unique fin structure with dual gates, revolutionizing the efficiency and performance of semiconductor devices.

Career Highlights:

Sporre's career is marked by his tenure at renowned companies such as IBM (International Business Machines Corporation) and Tessera, Inc.. His contributions to these tech giants have been instrumental in advancing the field of semiconductor technology and solidifying his reputation as an industry leader.

Collaborations:

Throughout his career, Sporre has collaborated with esteemed colleagues such as Kangguo Cheng and Sean Teehan. Together, they have pushed the boundaries of innovation, working side by side to bring cutting-edge technologies to life.

Conclusion:

In conclusion, John Ryan Sporre's impact on the world of semiconductor technology is undeniable. His relentless pursuit of innovation, coupled with his keen intellect, has solidified his position as a trailblazer in the field. With a bright future ahead, Sporre continues to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…