John Ryan Sporre

USPTO Granted Patents = 94 (Patent Applications = 1)

Average Co-Inventor Count = 5.2

ph-index = 9

Forward Citations = 461(Granted Patents)

DiyaCoin

= 0.52

Inventors with similar research interests:

Location History:

Cohoes, NY (US) (2019 - 2020)
Albany, NY (US) (2015 - 2024)

Company Filing History:

83 out of 164,108

International Business Machines Corporation

patents

6 out of 1,853

Adeia Semiconductor Bonding Technologies Inc.

University of Illinois

patents

6. 1 out of 51

Elpis Technologies Inc.

patents

Years Active: 2015-2025

where 'Filed Patents' based on already Granted Patents

94 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 12327798 - Physical unclonable function (2025-06-10),

2. 11869937 - Semiconductor device and method of forming the semiconductor device (2024-01-09),

3. 11869936 - Semiconductor device and method of forming the semiconductor device (2024-01-09),

4. 11652161 - Nanosheet channel-to-source and drain isolation (2023-05-16),

5. 11646235 - Vertical tunneling field effect transistor with dual liner bottom spacer (2023-05-09),

6. 11615992 - Substrate isolated VTFET devices (2023-03-28),

7. 11557589 - Air gap spacer for metal gates (2023-01-17),

8. 11462631 - Sublithography gate cut physical unclonable function (2022-10-04),

9. 11315922 - Fin cut to prevent replacement gate collapse on STI (2022-04-26),

10. 11239316 - Semiconductor device and method of forming the semiconductor device (2022-02-01),

11. 11183389 - Fin field effect transistor devices with self-aligned gates (2021-11-23),

12. 11152266 - Vertical tunneling field effect transistor with dual liner bottom spacer (2021-10-19),

13. 11127815 - Semiconductor device and method of forming the semiconductor device (2021-09-21),

14. 11043581 - Nanosheet channel-to-source and drain isolation (2021-06-22),

15. 11024715 - FinFET gate cut after dummy gate removal (2021-06-01),

Title: The Inventive Journey of John Ryan Sporre

Introduction:

John Ryan Sporre, a prolific inventor with a sharp mind and a passion for innovation, hails from Albany, NY (US). With an impressive track record of 93 patents to his name, he is a driving force in the world of semiconductor technology.

Latest Patents:

Among his latest patents is a groundbreaking "Semiconductor device and method of forming the semiconductor device." This innovation features a unique fin structure with dual gates, revolutionizing the efficiency and performance of semiconductor devices.

Career Highlights:

Sporre's career is marked by his tenure at renowned companies such as IBM (International Business Machines Corporation) and Tessera, Inc.. His contributions to these tech giants have been instrumental in advancing the field of semiconductor technology and solidifying his reputation as an industry leader.

Collaborations:

Throughout his career, Sporre has collaborated with esteemed colleagues such as Kangguo Cheng and Sean Teehan. Together, they have pushed the boundaries of innovation, working side by side to bring cutting-edge technologies to life.

Conclusion:

In conclusion, John Ryan Sporre's impact on the world of semiconductor technology is undeniable. His relentless pursuit of innovation, coupled with his keen intellect, has solidified his position as a trailblazer in the field. With a bright future ahead, Sporre continues to inspire the next generation of inventors and shape the future of technology.

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1 patent pending:

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