IDiyas

For the Inventor, By the Inventor

Rensselaer, NY, United States of America

Sean Teehan

LinkedIn
USPTO Granted Patents = 70 

Average Co-Inventor Count = 5.5

ph-index = 8

Forward Citations = 373(Granted Patents)

DiyaCoin DiyaCoin = 0.45 


Inventors with similar research interests:


Location History:

  • Clifton Park, NY (US) (2018 - 2019)
  • Albany, NY (US) (2023)
  • Rensselaer, NY (US) (2016 - 2024)

Company Filing History:

goldMedal63 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal4 out of 1,853 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
bronzeMedal2 out of 19 
 
Adeia Semiconductor Solutions LLC
 patents
4. 1 out of 1 
 
Terresa, Inc.
 patent

Years Active: 2016-2025

where 'Filed Patents' based on already Granted Patents

70 patents (USPTO):
1. 12402403 - Air gap spacer for metal gates (2025-08-26),
2. 12166110 - Nanosheet channel-to-source and drain isolation (2024-12-10),
3. 11869937 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
4. 11869936 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
5. 11673766 - Elevator analytics facilitating passenger destination prediction and resource optimization (2023-06-13),
6. 11652161 - Nanosheet channel-to-source and drain isolation (2023-05-16),
7. 11646235 - Vertical tunneling field effect transistor with dual liner bottom spacer (2023-05-09),
8. 11557589 - Air gap spacer for metal gates (2023-01-17),
9. 11239316 - Semiconductor device and method of forming the semiconductor device (2022-02-01),
10. 11152266 - Vertical tunneling field effect transistor with dual liner bottom spacer (2021-10-19),
11. 11152252 - Semiconductor device with reduced contact resistance (2021-10-19),
12. 11127815 - Semiconductor device and method of forming the semiconductor device (2021-09-21),
13. 11075299 - Transistor gate having tapered segments positioned above the fin channel (2021-07-27),
14. 11043581 - Nanosheet channel-to-source and drain isolation (2021-06-22),
15. 10937810 - Sub-fin removal for SOI like isolation with uniform active fin height (2021-03-02),

As an AI assistant specializing in innovations, inventions, inventors, patent attorneys, assignees, and patents, I can provide you with an article about inventor Sean Teehan based on the given data.

Title: The Inventor Extraordinaire: Sean Teehan

Introduction:

Sean Teehan, a prolific inventor hailing from Rensselaer, NY, has made significant contributions to the field of semiconductor devices with a remarkable portfolio of 68 patents.

Latest Patents:

Among his latest patents is a groundbreaking "Semiconductor device and method of forming the semiconductor device," featuring innovative designs such as a fin structure with recesses and multiple gates for enhanced performance and functionality.

Career Highlights:

Throughout his illustrious career, Sean Teehan has lent his expertise to renowned companies such as IBM (International Business Machines Corporation) and Tessera, Inc., where he has played a pivotal role in pushing the boundaries of semiconductor technology.

Collaborations:

Collaborating with accomplished individuals like John Ryan Sporre and Kangguo Cheng, Sean Teehan has been at the forefront of cutting-edge research and development, fostering a culture of innovation and collaboration within the industry.

Conclusion:

In conclusion, Sean Teehan stands out as a trailblazing innovator whose relentless pursuit of excellence has resulted in numerous groundbreaking patents that have shaped the landscape of semiconductor devices. His dedication to advancing technology and forging new paths underscores his status as a true visionary in the field.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…