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For the Inventor, By the Inventor

Schenectady, NY, United States of America

Eric R Miller

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This inventor holds 84 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Devices (CPC class H01L29-66545). Top assignees: International Business Machines Corporation, Adeia Semiconductor Bonding Technologies Inc., Adeia Semiconductor Solutions LLC. Active years: 2016-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Eric R Miller. Retrieved from https://idiyas.com/inventor/eric-r-miller

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 84 

% Patents Active = 72.6

Average Co-Inventor Count = 5.4

ph-index = 8

Forward Citations = 353(Granted Patents)

Forward Citations (Not Self Cited) = 285(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Scheneclady, NY (US) (2021)
  • Schenectady, NY (US) (2016 - 2023)
  • Albany, NY (US) (2016 - 2023)
  • Fairfield, CT (US) (2023)
  • Watervliet, NY (US) (2019 - 2024)

Company Filing History:

goldMedal76 out of 166,351 
 
International Business Machines Corporation
 patents
silverMedal4 out of 1,909 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
bronzeMedal2 out of 30 
 
Adeia Semiconductor Solutions LLC
 patents
4. 1 out of 5,671 
 
Globalfoundries Inc.
 patents
5. 1 out of 1 
 
Terresa, Inc.
 patent

Years Active: 2016-2025

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Areas of Expertise:
Nanosheet Isolation
VTFET Architecture
Air Gap Spacer
Dual Width Finned Structure
Carbon-Rich Low-K Spacer
EUV Gate Patterning
Fin Field Effect Transistors
Self-Aligned Spacers
Transistor Gate Design
Super Long Channel Device
Substrate Isolation
Contact Self-Alignment
84 patents (USPTO):Explore Patents
1. 12402403 - Air gap spacer for metal gates (2025-08-26),
2. 12166110 - Nanosheet channel-to-source and drain isolation (2024-12-10),
3. 11869937 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
4. 11869936 - Semiconductor device and method of forming the semiconductor device (2024-01-09),
5. 11791398 - Nano multilayer carbon-rich low-k spacer (2023-10-17),
6. 11710768 - Hybrid diffusion break with EUV gate patterning (2023-07-25),
7. 11695059 - Bottom source/drain etch with fin-cut-last-VTFET (2023-07-04),
8. 11673766 - Elevator analytics facilitating passenger destination prediction and resource optimization (2023-06-13),
9. 11652161 - Nanosheet channel-to-source and drain isolation (2023-05-16),
10. 11646358 - Sacrificial fin for contact self-alignment (2023-05-09),
11. 11646235 - Vertical tunneling field effect transistor with dual liner bottom spacer (2023-05-09),
12. 11615992 - Substrate isolated VTFET devices (2023-03-28),
13. 11605717 - Wrapped-around contact for vertical field effect transistor top source-drain (2023-03-14),
14. 11557589 - Air gap spacer for metal gates (2023-01-17),
15. 11521894 - Partial wrap around top contact (2022-12-06),

Title: The Innovative Journey of Eric R Miller

Introduction: Eric R Miller, a talented inventor hailing from Schenectady, NY, has made significant contributions to the world of innovations with his creative mind and dedication.

Latest Patents: Eric R Miller's latest patents showcase his commitment to pushing the boundaries of technology and design, with a focus on improving everyday life through his inventions.

Career Highlights: Throughout his illustrious career, Eric R Miller has been recognized for his groundbreaking work in various fields, earning him a reputation as a visionary inventor. His innovative spirit has led to the development of cutting-edge solutions that have revolutionized industries.

Collaborations: Eric R Miller's collaborative efforts with leading companies, research institutions, and universities have been instrumental in bringing his ideas to life. By working with top experts in the field, he has been able to turn his concepts into tangible inventions that have made a lasting impact.

Conclusion: Eric R Miller's passion for innovation and his relentless pursuit of excellence have solidified his position as a prominent figure in the world of inventors. His remarkable journey continues to inspire aspiring innovators to think outside the box and create solutions that shape the future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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