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Schenectady, NY, United States of America

Eric R Miller

USPTO Granted Patents = 84 (Patent Applications = 2)

Average Co-Inventor Count = 5.4

ph-index = 8

Forward Citations = 349(Granted Patents)

Forward Citations (Not Self Cited) = 285(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Scheneclady, NY (US) (2021)
Schenectady, NY (US) (2016 - 2023)
Albany, NY (US) (2016 - 2023)
Fairfield, CT (US) (2023)
Watervliet, NY (US) (2019 - 2024)

Company Filing History:

76 out of 164,197

International Business Machines Corporation

Adeia Semiconductor Bonding Technologies Inc.

Adeia Semiconductor Solutions LLC

5. 1 out of 5,671

Globalfoundries Inc.

Years Active: 2016-2025

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Areas of Expertise:

Air Gap Spacer

Nanosheet Isolation

Vertical Tunneling Field Effect Transistor

Fin Field Effect Transistors

Hybrid Diffusion Break

Nano Multilayer Carbon-Rich Spacer

Elevator Analytics

Controlled Spacer RIE

Sub-Fin Removal

Super Long Channel Device

Transistor Gate Design

Self-Aligned Double Patterning

84 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12402403 - Air gap spacer for metal gates (2025-08-26),

2. 12166110 - Nanosheet channel-to-source and drain isolation (2024-12-10),

3. 11869937 - Semiconductor device and method of forming the semiconductor device (2024-01-09),

4. 11869936 - Semiconductor device and method of forming the semiconductor device (2024-01-09),

5. 11791398 - Nano multilayer carbon-rich low-k spacer (2023-10-17),

6. 11710768 - Hybrid diffusion break with EUV gate patterning (2023-07-25),

7. 11695059 - Bottom source/drain etch with fin-cut-last-VTFET (2023-07-04),

8. 11673766 - Elevator analytics facilitating passenger destination prediction and resource optimization (2023-06-13),

9. 11652161 - Nanosheet channel-to-source and drain isolation (2023-05-16),

10. 11646358 - Sacrificial fin for contact self-alignment (2023-05-09),

11. 11646235 - Vertical tunneling field effect transistor with dual liner bottom spacer (2023-05-09),

12. 11615992 - Substrate isolated VTFET devices (2023-03-28),

13. 11605717 - Wrapped-around contact for vertical field effect transistor top source-drain (2023-03-14),

14. 11557589 - Air gap spacer for metal gates (2023-01-17),

15. 11521894 - Partial wrap around top contact (2022-12-06),

Title: The Innovative Journey of Eric R Miller

Introduction: Eric R Miller, a talented inventor hailing from Schenectady, NY, has made significant contributions to the world of innovations with his creative mind and dedication.

Latest Patents: Eric R Miller's latest patents showcase his commitment to pushing the boundaries of technology and design, with a focus on improving everyday life through his inventions.

Career Highlights: Throughout his illustrious career, Eric R Miller has been recognized for his groundbreaking work in various fields, earning him a reputation as a visionary inventor. His innovative spirit has led to the development of cutting-edge solutions that have revolutionized industries.

Collaborations: Eric R Miller's collaborative efforts with leading companies, research institutions, and universities have been instrumental in bringing his ideas to life. By working with top experts in the field, he has been able to turn his concepts into tangible inventions that have made a lasting impact.

Conclusion: Eric R Miller's passion for innovation and his relentless pursuit of excellence have solidified his position as a prominent figure in the world of inventors. His remarkable journey continues to inspire aspiring innovators to think outside the box and create solutions that shape the future.

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