The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Mar. 04, 2022
International Business Machines Corporation, Armonk, NY (US);
Julien Frougier, Albany, NY (US);
Sagarika Mukesh, Albany, NY (US);
Albert M Chu, Nashua, NH (US);
Ruilong Xie, Niskayuna, NY (US);
Andrew M. Greene, Slingerlands, NY (US);
Eric Miller, Watervliet, NY (US);
Junli Wang, Slingerlands, NY (US);
Veeraraghavan S. Basker, Fremont, CA (US);
Prateek Hundekar, Guilderland, NY (US);
Tushar Gupta, Albany, NY (US);
Su Chen Fan, Cohoes, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor device including a first nanodevice is located on a substrate, where the first nanodevice includes at least one channel. A first source/drain connected to the first nanodevice. A second nanodevice located on the substrate, where the second nanodevice includes at least one channel and a second source/drain connected to the second nanodevice. A first contact located above the first source/drain. A second contact located above the second source/drain. A contact cap located on top of the first contact and the second contact, where the contact cap has a first leg that extends downwards between the first contact and the second contact. The first leg of the contact cap is in contact with a first sidewall of the first contact, and a first sidewall of the second contact.