The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 28, 2026
Filed:
Mar. 20, 2023
International Business Machines Corporation, Armonk, NY (US);
Eric Miller, Albany, NY (US);
John Christopher Arnold, North Chatham, NY (US);
Kisik Choi, Watervliet, NY (US);
Ruilong Xie, Niskayuna, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A microelectronic device including a first nanosheet transistors adjacent to a second nanosheet transistor. The first nanosheet transistor includes a plurality of first nanosheets, and the second nanosheet transistor includes a plurality of second nanosheets. A source/drain located between the first nanosheet transistor and second nanosheet transistor. A first gate wraps around the plurality of first nanosheets. A second gate wraps around the plurality of second nanosheets. A first upper spacer located adjacent to the first gate, where the first upper spacer is in contact with at least three sides of the first gate. A second upper spacer located adjacent to the second gate, where the second upper spacer is in contact with at least three sides of the second gate. A backside interconnect connected to the source/drain, where the backside interconnect is in contact with the first upper spacer and the second upper spacer.