The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2025
Filed:
Nov. 28, 2022
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Assignee:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/28 (2006.01); H10D 30/01 (2025.01); H10D 30/43 (2025.01); H10D 30/67 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/28088 (2013.01); H10D 30/014 (2025.01); H10D 30/43 (2025.01); H10D 30/6735 (2025.01); H10D 30/6739 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/0177 (2025.01); H10D 84/85 (2025.01);
Abstract
Semiconductor devices and methods of forming the same include a first transistor in a first region having a first work function metal layer. A second transistor in a second region has a second work function metal layer that overlaps a portion of the first work function metal layer and that has a vertical part above the portion of the first work function metal layer.