The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 12, 2026
Filed:
Sep. 01, 2022
International Business Machines Corporation, Armonk, NY (US);
Ruqiang Bao, Niskayuna, NY (US);
Effendi Leobandung, Stormville, NY (US);
Eric Miller, Watervliet, NY (US);
Charlotte Dewan Adams, Schenectady, NY (US);
Cornelius Brown Peethala, Slingerlands, NY (US);
Liqiao Qin, Albany, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Embodiments of the present invention are directed to processing methods and resulting structures for non-shared metal gate integrations for transistors. In a non-limiting embodiment of the invention, a first nanosheet stack is formed in a first region of a substrate and a second nanosheet stack is formed in a second region of the substrate. A first work function metal stack is formed around nanosheets in the first nanosheet stack and nanosheets in the second nanosheet stack, and a first sacrificial material is formed around the first work function metal stack. The first sacrificial material in the second nanosheet stack is replaced with a second sacrificial material and the first sacrificial material and the first work function metal stack in the first nanosheet stack are replaced with a second work function metal stack. The second sacrificial material in the second nanosheet stack is replaced with a third work function metal stack.