The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 23, 2019

Filed:

Jan. 18, 2018
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ankur Arya, Saratoga Springs, NY (US);

Brian Greene, Saratoga Springs, NY (US);

Qun Gao, Clifton Park, NY (US);

Christopher Nassar, Ballston Spa, NY (US);

Junsic Hong, Malta, NY (US);

Vishal Chhabra, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/01 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/6656 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/6653 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract

One illustrative method disclosed herein includes, among other things, forming a first fin having first and second opposing sidewalls and forming a first sidewall spacer positioned adjacent the first sidewall and a second sidewall spacer positioned adjacent the second sidewall, wherein the first sidewall spacer has a greater height than the second sidewall spacer. In this example, the method further includes forming epitaxial semiconductor material on the fin and above the first and second sidewall spacers.


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