Clifton Park, NY, United States of America

Vishal Chhabra

USPTO Granted Patents = 4 

Average Co-Inventor Count = 6.1

ph-index = 1

Forward Citations = 31(Granted Patents)


Company Filing History:


Years Active: 2018-2020

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4 patents (USPTO):

Title: Vishal Chhabra: Innovator in Semiconductor Technology

Introduction

Vishal Chhabra is a notable inventor based in Clifton Park, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on innovative solutions that enhance the performance and efficiency of semiconductor devices.

Latest Patents

One of Vishal Chhabra's latest patents is titled "Cut inside replacement metal gate trench to mitigate N-P proximity effect." This patent addresses semiconductor structures and presents methods to mitigate n-p proximity effects. The described structure includes a first device and a second device adjacent to the first device. It features a dielectric material that includes a cut within a trench between the two devices. Additionally, a common gate electrode is shared between the first and second devices, which is provided over the dielectric material and contacts the underlying material within the cut.

Career Highlights

Vishal Chhabra is currently employed at GlobalFoundries Inc., where he continues to push the boundaries of semiconductor innovation. His expertise and dedication to research have positioned him as a key player in the industry.

Collaborations

Throughout his career, Vishal has collaborated with talented individuals such as Balaji Kannan and Ayse M Ozbek. These collaborations have further enriched his work and contributed to the advancement of semiconductor technologies.

Conclusion

Vishal Chhabra's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor in the field. His innovative approaches continue to shape the future of semiconductor devices.

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