The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2018

Filed:

Dec. 22, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Shafaat Ahmed, Ballston Lake, NY (US);

Benjamin G. Moser, Malta, NY (US);

Vimal Kumar Kamineni, Mechanicville, NY (US);

Dinesh Koli, Clifton Park, NY (US);

Vishal Chhabra, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 21/265 (2006.01); H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53209 (2013.01); H01L 21/265 (2013.01); H01L 21/321 (2013.01); H01L 21/32139 (2013.01); H01L 21/7685 (2013.01); H01L 21/76877 (2013.01); H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 21/76807 (2013.01);
Abstract

The present disclosure relates to semiconductor structures and, more particularly, to a corrosion and/or etch protection layer for contacts and interconnect metallization integration structures and methods of manufacture. The structure includes a metallization structure formed within a trench of a substrate and a layer of cobalt phosphorous (CoP) on the metallization structure. The CoP layer is structured to prevent metal migration from the metallization structure and corrosion of the metallization structure during etching processes.


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