Malta, NY, United States of America

Benjamin G Moser


Average Co-Inventor Count = 4.8

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2017-2019

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: Innovations of Benjamin G Moser

Introduction

Benjamin G Moser is an accomplished inventor based in Malta, NY (US). He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His work focuses on methods that enhance the performance and reliability of electronic components.

Latest Patents

One of his latest patents is titled "Metal resistor forming method using ion implantation." This patent describes methods for forming a metal resistor by depositing a metal layer, such as tungsten, on a substrate. The process involves implanting a semiconductor species, like silicon or germanium, into the metal layer to create a semiconductor-metal alloy layer. This innovative approach ensures that the metal resistor maintains a sheet resistance that remains substantially constant before and after subsequent annealing.

Another notable patent is "Corrosion and/or etch protection layer for contacts and interconnect metallization integration." This patent addresses the need for a corrosion and etch protection layer in semiconductor structures. It includes a metallization structure formed within a trench of a substrate, along with a layer of cobalt phosphorous (CoP) designed to prevent metal migration and corrosion during etching processes.

Career Highlights

Benjamin G Moser is currently employed at GlobalFoundries Inc., where he continues to push the boundaries of semiconductor technology. His innovative methods and designs have contributed to the advancement of electronic components, making them more efficient and reliable.

Collaborations

Throughout his career, Moser has collaborated with talented individuals such as Yue Ke and Mohammad Hasanuzzaman. These collaborations have fostered a creative environment that encourages the development of groundbreaking technologies.

Conclusion

Benjamin G Moser's contributions to the field of semiconductor technology are noteworthy. His innovative patents and collaborative efforts have significantly impacted the industry, showcasing his dedication to advancing electronic components.

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