The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 16, 2019

Filed:

Nov. 04, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Domingo A. Ferrer Luppi, Fishkill, NY (US);

Aritra Dasgupta, Clifton Park, NY (US);

Benjamin G. Moser, Malta, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 28/24 (2013.01);
Abstract

Methods of forming a metal resistor are provided. The methods may include: depositing a metal layer, e.g., tungsten, on a substrate; and forming the metal resistor by implanting a semiconductor species, e.g., silicon and/or germanium, into the metal layer to form a semiconductor-metal alloy layer from at least a portion of the metal layer. In certain embodiments, an adhesion layer may be deposited by ALD prior to metal layer depositing. The metal resistor has a sheet resistance that remains substantially constant prior to and after subsequent annealing.


Find Patent Forward Citations

Ferrer Luppi, Domingo. (2019). Metal resistor forming method using ion implantation (U.S. Patent No. 10263065). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/10263065

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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