The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2017
Filed:
May. 11, 2016
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Derya Deniz, Watervliet, NY (US);
Benjamin G. Moser, Malta, NY (US);
Sunit S. Mahajan, Halfmoon, NY (US);
Domingo A. Ferrer Luppi, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 29/45 (2006.01); H01L 21/3205 (2006.01); H01L 21/3215 (2006.01); H01L 21/768 (2006.01); H01L 21/321 (2006.01); H01L 21/285 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/266 (2013.01); H01L 21/2855 (2013.01); H01L 21/28568 (2013.01); H01L 21/3212 (2013.01); H01L 21/3215 (2013.01); H01L 21/32053 (2013.01); H01L 21/76841 (2013.01); H01L 21/76889 (2013.01); H01L 29/45 (2013.01);
Abstract
One aspect of the disclosure relates to a contact within a dielectric layer to a source/drain terminal of a field-effect-transistor (FET). The contact may include: a titanium-tantalum-silicide at a surface of the source/drain terminal; a barrier layer over the titanium-tantalum-silicide; and a metal over the barrier layer and extending to a top surface of the dielectric layer.