The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 23, 2018

Filed:

Dec. 08, 2016
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Yue Ke, Arlington, MA (US);

Alexander Reznicek, Troy, NY (US);

Benjamin Moser, Malta, NY (US);

Dominic J. Schepis, Wappingers Falls, NY (US);

Melissa A. Smith, Cambridge, MA (US);

Henry K. Utomo, Newburgh, NY (US);

Reinaldo Vega, Mahopac, NY (US);

Sameer Jain, Hopewell Junction, NY (US);

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/324 (2006.01); H01L 21/266 (2006.01); H01L 29/165 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823431 (2013.01); H01L 21/02532 (2013.01); H01L 21/266 (2013.01); H01L 21/30604 (2013.01); H01L 21/324 (2013.01); H01L 29/165 (2013.01); H01L 29/66795 (2013.01);
Abstract

Methods of fabricating integrated circuit devices for forming uniform and well controlled fin recesses are disclosed. One method includes, for instance: obtaining an intermediate semiconductor structure having a substrate, at least one fin disposed on the substrate, at least one gate structure positioned over the at least one fin, and at least one oxide layer disposed on the substrate and about the at least one fin and the at least one gate structure; implanting germanium (Ge) in a first region of the at least one fin; and removing the first region of the at least one fin implanted with Ge.


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