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For the Inventor, By the Inventor

Newburgh, NY, United States of America

Henry K Utomo

USPTO Granted Patents = 67 

Average Co-Inventor Count = 4.5

ph-index = 10

Forward Citations = 449(Granted Patents)

Forward Citations (Not Self Cited) = 430(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Poughkeepsie, NY (US) (2006 - 2010)
  • Hopewell Junction, NY (US) (2012 - 2013)
  • Newburgh, NC (US) (2015)
  • Newbergh, NY (US) (2017 - 2018)
  • Newburgh, NY (US) (2009 - 2021)
  • Ridgefield, CT (US) (2020 - 2021)

Company Filing History:

goldMedal54 out of 164,197 
 
International Business Machines Corporation
 patents
silverMedal14 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal5 out of 14,724 
 
Infineon Technologies Ag
 patents
4. 4 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
5. 4 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents
6. 2 out of 2,870 
 
Stmicroelectronics Gmbh
 patents
7. 2 out of 244 
 
Infineon Technologies North America Corp.
 patents
8. 1 out of 52,735 
 
Kabushiki Kaisha Toshiba
 patents
where one patent can have more than one assignee

Years Active: 2006-2025

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Areas of Expertise:
Dielectric Deposition
Phase Change Materials
Nano-Structures
Microbe Trapping
FinFET Technology
Epitaxial Growth
Self-Aligned Contacts
Strained Channels
Field-Effect Transistors
Silicon-Germanium Fins
Epitaxial Transistors
Replacement Metal Gate
67 patents (USPTO):Explore Patents
1. 12471293 - In-situ low temperature dielectric deposition and selective trim of phase change materials (2025-11-11),
2. 11150168 - Semiconductor manufactured nano-structures for microbe or virus trapping or destruction (2021-10-19),
3. 11081583 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2021-08-03),
4. 11060960 - Semiconductor manufactured nano-structures for microbe or virus trapping or destruction (2021-07-13),
5. 10896976 - Embedded source/drain structure for tall FinFet and method of formation (2021-01-19),
6. 10777735 - Contact via structures (2020-09-15),
7. 10686124 - Contact via structures (2020-06-16),
8. 10615279 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2020-04-07),
9. 10586921 - Forming self-aligned contacts on pillar structures (2020-03-10),
10. 10586920 - Forming self-aligned contacts on pillar structures (2020-03-10),
11. 10559690 - Embedded source/drain structure for tall FinFET and method of formation (2020-02-11),
12. 10557779 - Semiconductor manufactured nano-structures for microbe or virus trapping or destruction (2020-02-11),
13. 10393635 - Semiconductor manufactured nano-structures for microbe or virus trapping or destruction (2019-08-27),
14. 10246730 - Semiconductor manufactured nano-structures for microbe or virus trapping or destruction (2019-04-02),
15. 10243077 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2019-03-26),

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