The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2026
Filed:
Mar. 22, 2023
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Ching-Tzu Chen, Ossining, NY (US);
Henry K. Utomo, Ridgefield, CT (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10B 61/00 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H10B 61/22 (2023.02);
Abstract
Spin-orbit torque magnetoresistive random access memory (SOT MRAM) devices are provided. Each of the SOT MRAM devices integrates a SOT layer and an interconnect layer at a same metal level using a topological conductor (i.e., a topological metal or a topological semimetal) as both the interconnect layer and the SOT layer. The SOT MRAM devices further include a magnetic tunnel junction (MTJ) structure contacting the SOT layer, and a contact structure contacting the MTJ structure.