The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 19, 2021
Filed:
Aug. 15, 2019
International Business Machines Corporation, Armonk, NY (US);
Veeraraghavan S. Basker, Schenectady, NY (US);
Kangguo Cheng, Schenectady, NY (US);
Ali Khakifirooz, Los Altos, CA (US);
Henry K. Utomo, Ridgefield, CT (US);
Reinaldo Ariel Vega, Mahopac, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A shallow trench isolation layer is formed on a structure comprising semiconductor fins. Portions of the fins are recessed to a level below the shallow trench isolation layer. Epitaxial stressor regions are then formed on the recessed fin areas. A bottom portion of the epitaxial stressor regions are contained by the shallow trench isolation layer, which delays formation of the diamond shape as the epitaxial region is grown. Once the epitaxial stressor regions exceed the level of the shallow trench isolation layer, the diamond shape starts to form. The result of delaying the start of the diamond growth pattern is that the epitaxial regions are narrower for a given fin height. This allows for taller fins, which provide more current handling capacity, while the narrower epitaxial stressor regions enable a smaller fin pitch, allowing for increased circuit density.