Yue Ke

USPTO Granted Patents = 19 (Patent Applications = 2)

Average Co-Inventor Count = 6.2

ph-index = 5

Forward Citations = 70(Granted Patents)

Location History:

Hopewell Junction, NY (US) (2016)
Arlington, MA (US) (2017 - 2018)
Fishkill, NY (US) (2015 - 2021)

Company Filing History:

International Business Machines Corporation

patents

Years Active: 2015-2021

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11081583 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2021-08-03),

2. 10615279 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2020-04-07),

3. 10243077 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2019-03-26),

4. 9917190 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2018-03-13),

5. 9875939 - Methods of forming uniform and pitch independent fin recess (2018-01-23),

6. 9752251 - Self-limiting selective epitaxy process for preventing merger of semiconductor fins (2017-09-05),

7. 9685334 - Methods of forming semiconductor fin with carbon dopant for diffusion control (2017-06-20),

8. 9634084 - Conformal buffer layer in source and drain regions of fin-type transistors (2017-04-25),

9. 9577100 - FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions (2017-02-21),

10. 9577099 - Diamond shaped source drain epitaxy with underlying buffer layer (2017-02-21),

11. 9536985 - Epitaxial growth of material on source/drain regions of FinFET structure (2017-01-03),

12. 9466616 - Uniform junction formation in FinFETs (2016-10-11),

13. 9349650 - Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs (2016-05-24),

14. 9349649 - Low resistance and defect free epitaxial semiconductor material for providing merged FinFETs (2016-05-24),

15. 9318608 - Uniform junction formation in FinFETs (2016-04-19),

Title: Innovations by Yue Ke: A Visionary in Semiconductor Technology

Introduction

Yue Ke, based in Fishkill, NY, is a prominent inventor in the field of semiconductor technology, holding a remarkable portfolio of 19 patents. His work primarily centers around enhancing semiconductor devices, showcasing a commitment to innovation that significantly impacts the industry.

Latest Patents

Among his latest patents is a groundbreaking invention titled "FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth." This invention outlines a method for forming a semiconductor device, which includes the formation of a gate structure on the channel region of fin structures. It further details the use of flowable dielectric material on the source and drain regions of these fin structures, filling spaces between adjacent fins. By exposing the upper surfaces of these regions, an epitaxial semiconductor material can be effectively formed, enhancing overall device performance.

Career Highlights

Yue Ke's career has been marked by significant contributions while working with industry leaders such as GlobalFoundries Inc. and International Business Machines Corporation (IBM). His experience in these companies has allowed him to collaborate on various innovative projects, solidifying his status as a thought leader in semiconductor advancements.

Collaborations

Throughout his career, Yue has collaborated with esteemed coworkers like Judson Robert Holt and Eric C. Harley. These partnerships have facilitated the exchange of ideas and innovation, contributing to groundbreaking advancements in semiconductor technology that further enhance device efficiency and performance.

Conclusion

Yue Ke's contributions to the semiconductor field through his numerous patents and collaborations with industry giants reflect a dedication to innovation and excellence. His work not only paves the way for future advancements but also serves as an inspiration to current and aspiring inventors in the technology sector.

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2 patents pending:

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