The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2017
Filed:
Jun. 16, 2014
Globalfoundries Inc., Grand Cayman, KY;
Kangguo Cheng, Schenectady, NY (US);
Michael P. Chudzik, Danbury, CT (US);
Eric C. Harley, Lagrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Yue Ke, Fishkill, NY (US);
Rishikesh Krishnan, Painted Post, NY (US);
Kern Rim, Yorktown Heights, NY (US);
Henry K. Utomo, Newburgh, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
A semiconductor device including at least one suspended channel structure of a silicon including material, and a gate structure present on the suspended channel structure. At least one gate dielectric layer is present surrounding the suspended channel structure, and at least one gate conductor is present on the at least one gate dielectric layer. Source and drain structures may be composed of a silicon and germanium including material. The source and drain structures are in contact with the source and drain region ends of the suspended channel structure through a silicon cladding layer.