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For the Inventor, By the Inventor

Lagrangeville, NY, United States of America

Eric C Harley

USPTO Granted Patents = 19 

Average Co-Inventor Count = 5.5

ph-index = 5

Forward Citations = 61(Granted Patents)


Company Filing History:

goldMedal14 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal7 out of 5,671 
 
Globalfoundries Inc.
 patents
bronzeMedal2 out of 244 
 
Infineon Technologies North America Corp.
 patents
4. 1 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (corporation)
 patents
where one patent can have more than one assignee

Years Active: 2010-2021

where 'Filed Patents' based on already Granted Patents

19 patents (USPTO):
1. 11081583 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2021-08-03),
2. 10615279 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2020-04-07),
3. 10243077 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2019-03-26),
4. 9917190 - FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2018-03-13),
5. 9752251 - Self-limiting selective epitaxy process for preventing merger of semiconductor fins (2017-09-05),
6. 9577100 - FinFET and nanowire semiconductor devices with suspended channel regions and gate structures surrounding the suspended channel regions (2017-02-21),
7. 9412843 - Method for embedded diamond-shaped stress element (2016-08-09),
8. 9390884 - Method of inspecting a semiconductor substrate (2016-07-12),
9. 9312364 - finFET with dielectric isolation after gate module for improved source and drain region epitaxial growth (2016-04-12),
10. 9246003 - FINFET structures with fins recessed beneath the gate (2016-01-26),
11. 9236477 - Graphene transistor with a sublithographic channel width (2016-01-12),
12. 9219114 - Partial FIN on oxide for improved electrical isolation of raised active regions (2015-12-22),
13. 9123826 - Single crystal source-drain merged by polycrystalline material (2015-09-01),
14. 8987093 - Multigate finFETs with epitaxially-grown merged source/drains (2015-03-24),
15. 8716037 - Measurement of CMOS device channel strain by X-ray diffraction (2014-05-06),

Title: The Innovative Mind of Eric C. Harley

Introduction: Eric C. Harley, a distinguished inventor based in Lagrangeville, NY, has made significant contributions to the field of semiconductor technology. With a remarkable portfolio of 19 patents, he has become a pivotal figure in the advancement of FinFET (Fin Field-Effect Transistor) designs, showcasing his dedication to improving semiconductor device functionality.

Latest Patents: Among his latest innovations is the patent for "FinFET with dielectric isolation after gate module for improved source and drain region epitaxial growth." This invention presents a device and method for forming a semiconductor device involving a gate structure on a channel region of fin structures. It also details the use of a flowable dielectric material that fills spaces between adjacent fin structures, enhancing the epitaxial growth on source and drain regions.

Another significant patent under his name shares similar features, further emphasizing his innovative approach in creating semiconductor devices. The techniques he developed promise to improve efficiency in semiconductor applications, marking a noteworthy advancement in the industry.

Career Highlights: Eric's illustrious career includes notable stints at well-respected companies, such as IBM (International Business Machines Corporation) and Globalfoundries Inc. His work at these prominent institutions enabled him to hone his skills in semiconductor fabrication and device engineering, thus shaping his inventive journey.

Collaborations: Throughout his career, Eric has collaborated with industry experts, including Judson Robert Holt and Yue Ke. These partnerships have inspired a synergy that has led to groundbreaking advancements in semiconductor technologies, showcasing the importance of teamwork in the innovation process.

Conclusion: Eric C. Harley epitomizes the spirit of innovation, continuously pushing the boundaries of semiconductor technology. With his 19 patents, he has made a profound impact on the industry, particularly in the realm of FinFET devices. As technology progresses, Eric's contributions will undoubtedly remain influential in guiding future developments in the field.

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