The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 01, 2015
Filed:
Mar. 24, 2014
International Business Machines Corporation, Armonk, NY (US);
Eric C. Harley, Lagrangeville, NY (US);
Judson R. Holt, Wappingers Falls, NY (US);
Yue Ke, Fishkill, NY (US);
Rishikesh Krishnan, Painted Post, NY (US);
Timothy J. McArdle, Hopewell Junction, NY (US);
Alexander Reznicek, Troy, NY (US);
Dominic J. Schepis, Wappingers Falls, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure includes forming a first fin and a second fin on a substrate. A gate structure is formed over a first portion of the first fin and the second fin without covering a second portion of the first fin and the second fin. Single-crystal epitaxial layers are deposited surrounding the second portion of the first fin and the second fin such that the single-crystal epitaxial layer on the first fin does not contact the single-crystal epitaxial layer on the second fin. A polycrystalline layer is then deposited surrounding the single-crystal epitaxial layers, so that the polycrystalline layer contacts the single-crystal epitaxial layer on the first fin and the single-crystal epitaxial layer on the second fin. The single-crystal epitaxial layers and the polycrystalline layer form a merged source-drain region.