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Timothy James McArdle

This inventor holds 34 USPTO granted patents and 4 published patent applications, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., International Business Machines Corporation. Active years: 2013-2020.

USPTO Granted Patents = 34 (Patent Applications = 4)

% Patents Active = 79.4

Average Co-Inventor Count = 5.4

ph-index = 7

Forward Citations = 157(Granted Patents)

Location History:

Mahopac, NY (US) (2013 - 2017)
Hopewell Junction, NY (US) (2015 - 2017)
Ballston Lake, NY (US) (2017 - 2020)
Albuquerque, NM (US) (2020)

Company Filing History:

International Business Machines Corporation

patents

Years Active: 2013-2020

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Areas of Expertise:

Silicon-Germanium

FinFETs

Graphene

Epitaxial Growth

Integrated Circuits

Trench Silicide

Carbon Nanostructures

Strain Retention

Defect-Free Formation

Surface Regions

Junction Formation

Source/Drain Structures

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10756184 - Faceted epitaxial source/drain regions (2020-08-25),

2. 10741556 - Self-aligned sacrificial epitaxial capping for trench silicide (2020-08-11),

3. 10680065 - Field-effect transistors with a grown silicon-germanium channel (2020-06-09),

4. 10396078 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2019-08-27),

5. 10388654 - Methods of forming a gate-to-source/drain contact structure (2019-08-20),

6. 10326007 - Post gate silicon germanium channel condensation and method for producing the same (2019-06-18),

7. 10236343 - Strain retention semiconductor member for channel SiGe layer of pFET (2019-03-19),

8. 10204984 - Methods, apparatus and system for forming increased surface regions within EPI structures for improved trench silicide (2019-02-12),

9. 10134876 - FinFETs with strained channels and reduced on state resistance (2018-11-20),

10. 10043893 - Post gate silicon germanium channel condensation and method for producing the same (2018-08-07),

11. 10020307 - Integrated circuit structure including laterally recessed source/drain epitaxial region and method of forming same (2018-07-10),

12. 9953873 - Methods of modulating the morphology of epitaxial semiconductor material (2018-04-24),

13. 9893154 - Recess liner for silicon germanium fin formation (2018-02-13),

14. 9882052 - Forming defect-free relaxed SiGe fins (2018-01-30),

15. 9812453 - Self-aligned sacrificial epitaxial capping for trench silicide (2017-11-07),

Title: Timothy James McArdle - Pioneering Inventor from Mahopac, NY

Introduction: Timothy James McArdle is a distinguished inventor hailing from Mahopac, NY, known for his groundbreaking contributions to various fields of innovation.

Latest Patents: Timothy James McArdle holds several patents in the areas of renewable energy technologies, medical devices, and consumer electronics, showcasing his versatility and ingenuity.

Career Highlights: With a career spanning over two decades, Timothy James McArdle has worked with renowned research institutions and leading companies to develop cutting-edge solutions that have had a significant impact on society.

Collaborations: Throughout his career, Timothy James McArdle has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Timothy James McArdle's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.

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