The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 25, 2020
Filed:
Nov. 05, 2018
Globalfoundries Inc., Grand Cayman, KY;
George R. Mulfinger, Gansevoort, NY (US);
Timothy J. McArdle, Albuquerque, NM (US);
Judson R. Holt, Ballston Lake, NY (US);
Steffen A. Sichler, Radebeul, DE;
Ömür I. Aydin, Dresden, DE;
Wei Hong, Clifton Park, NY (US);
Yi Qi, Niskayuna, NY (US);
Hui Zang, Guilderland, NY (US);
Liu Jiang, Clifton Park, NY (US);
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Abstract
The present disclosure relates to semiconductor structures and, more particularly, to faceted epitaxial source/drain regions and methods of manufacture. The structure includes: a gate structure over a substrate; an L-shaped sidewall spacer located on sidewalls of the gate structure and extending over the substrate adjacent to the gate structure; and faceted diffusion regions on the substrate, adjacent to the L-shaped sidewall spacer.