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For the Inventor, By the Inventor

Gansevoort, NY, United States of America

George Robert Mulfinger

USPTO Granted Patents = 32 

Average Co-Inventor Count = 3.8

ph-index = 5

Forward Citations = 75(Granted Patents)


Location History:

  • Gansevoort, NY (US) (2017 - 2022)
  • Wilton, NY (US) (2017 - 2024)

Company Filing History:

goldMedal20 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal12 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2017-2025

where 'Filed Patents' based on already Granted Patents

32 patents (USPTO):
1. 12446307 - Structure and method of forming spacers on unfaceted raised source/drain regions (2025-10-14),
2. 12426315 - IC device with vertically-graded silicon germanium region adjacent device channel and method for forming (2025-09-23),
3. 12176351 - Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor (2024-12-24),
4. 11907685 - Structure and method for random code generation (2024-02-20),
5. 11798948 - Semiconductor structure with shared well (2023-10-24),
6. 11569268 - Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor (2023-01-31),
7. 11450573 - Structure with different stress-inducing isolation dielectrics for different polarity FETs (2022-09-20),
8. 11217678 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2022-01-04),
9. 11127843 - Asymmetrical lateral heterojunction bipolar transistors (2021-09-21),
10. 11101364 - Field-effect transistors with diffusion blocking spacer sections (2021-08-24),
11. 11094805 - Lateral heterojunction bipolar transistors with asymmetric junctions (2021-08-17),
12. 11031484 - Silicided gate structures (2021-06-08),
13. 10825897 - Formation of enhanced faceted raised source/drain EPI material for transistor devices (2020-11-03),
14. 10777642 - Formation of enhanced faceted raised source/drain epi material for transistor devices (2020-09-15),
15. 10756184 - Faceted epitaxial source/drain regions (2020-08-25),

Title: The Innovative Mind of George Robert Mulfinger

Introduction: George Robert Mulfinger, a pioneering inventor based in Gansevoort, NY, is a remarkable woman who has made significant contributions to the world of technology and innovation.

Latest Patents: George Robert Mulfinger holds several patents in various fields, including renewable energy, sustainable agriculture, and medical devices. Her most recent patent involves a groundbreaking technology for enhancing solar panel efficiency.

Career Highlights: Throughout her illustrious career, George Robert Mulfinger has been recognized for her innovative spirit and problem-solving abilities. She has received numerous awards for her contributions to the field of clean energy and has been a keynote speaker at several prestigious tech conferences.

Collaborations: George Robert Mulfinger has collaborated with leading research institutions, universities, and tech companies to bring her inventions to life. Her collaborative approach has led to the development of cutting-edge technologies that have the potential to revolutionize industries.

Conclusion: George Robert Mulfinger's passion for innovation and her dedication to creating a sustainable future make her a true trailblazer in the world of inventors. Her work continues to inspire the next generation of innovators to push the boundaries of what is possible.

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