Gansevoort, NY, United States of America

George Robert Mulfinger

This inventor holds 34 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Semiconductor Technology. Top assignees: Globalfoundries Inc., Globalfoundries U.S. Inc.. Active years: 2017-2026.

USPTO Granted Patents = 34 (Patent Applications = 13)

% Patents Active = 97.1

EPO Patents = 1 (Patent Applications = 2)

Average Co-Inventor Count = 3.9

ph-index = 5

Forward Citations = 84(Granted Patents)

Location History:

Gansevoort, NY (US) (2017 - 2022)
Wilton, NY (US) (2017 - 2024)

Company Filing History:

Globalfoundries U.S. Inc.

patents

Years Active: 2017-2026

Loading Chart...

Areas of Expertise:

Semiconductor Device

Field-Effect Transistor

Silicon Germanium

Photonics Chips

Isolation Structures

Epitaxial Regions

Diffusion Break

Heterojunction Bipolar Transistors

Strain Retention

Transistor Devices

Integrated Circuit

Gate Contact Structure

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12628414 - Semiconductor device including diffusion break structure and method of forming semiconductor device (2026-05-12),

2. 12610615 - Device with isolation structures in active regions (2026-04-21),

3. 12446307 - Structure and method of forming spacers on unfaceted raised source/drain regions (2025-10-14),

4. 12426315 - IC device with vertically-graded silicon germanium region adjacent device channel and method for forming (2025-09-23),

5. 12176351 - Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor (2024-12-24),

6. 11907685 - Structure and method for random code generation (2024-02-20),

7. 11798948 - Semiconductor structure with shared well (2023-10-24),

8. 11569268 - Photonics chips including a fully-depleted silicon-on-insulator field-effect transistor (2023-01-31),

9. 11450573 - Structure with different stress-inducing isolation dielectrics for different polarity FETs (2022-09-20),

10. 11217678 - Differential SG/EG spacer integration with equivalent NFET/PFET spacer widths and dual raised source drain expitaxial silicon and triple-nitride spacer integration enabling high-voltage EG device on FDSOI (2022-01-04),

11. 11127843 - Asymmetrical lateral heterojunction bipolar transistors (2021-09-21),

12. 11101364 - Field-effect transistors with diffusion blocking spacer sections (2021-08-24),

13. 11094805 - Lateral heterojunction bipolar transistors with asymmetric junctions (2021-08-17),

14. 11031484 - Silicided gate structures (2021-06-08),

15. 10825897 - Formation of enhanced faceted raised source/drain EPI material for transistor devices (2020-11-03),

Title: The Innovative Mind of George Robert Mulfinger

Introduction: George Robert Mulfinger, a pioneering inventor based in Gansevoort, NY, is a remarkable woman who has made significant contributions to the world of technology and innovation.

Latest Patents: George Robert Mulfinger holds several patents in various fields, including renewable energy, sustainable agriculture, and medical devices. Her most recent patent involves a groundbreaking technology for enhancing solar panel efficiency.

Career Highlights: Throughout her illustrious career, George Robert Mulfinger has been recognized for her innovative spirit and problem-solving abilities. She has received numerous awards for her contributions to the field of clean energy and has been a keynote speaker at several prestigious tech conferences.

Collaborations: George Robert Mulfinger has collaborated with leading research institutions, universities, and tech companies to bring her inventions to life. Her collaborative approach has led to the development of cutting-edge technologies that have the potential to revolutionize industries.

Conclusion: George Robert Mulfinger's passion for innovation and her dedication to creating a sustainable future make her a true trailblazer in the world of inventors. Her work continues to inspire the next generation of innovators to push the boundaries of what is possible.