The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Jan. 30, 2023
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Judson Robert Holt, Ballston Lake, NY (US);
George Robert Mulfinger, Queensbury, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H10D 30/69 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01);
U.S. Cl.
CPC ...
H10D 30/751 (2025.01); H10D 84/0167 (2025.01); H10D 84/038 (2025.01);
Abstract
An integrated circuit (IC) device is disclosed which includes a first transistor over a substrate. The first transistor includes a gate over the substrate and between a source region and a drain region. The transistor further includes a first region of vertically-graded silicon germanium ('SiGe') adjacent a first side of a channel under the gate, and a second region of vertically-graded SiGe adjacent a second side of the channel. The channel includes substantially uniformly-graded SiGe.