The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 14, 2025

Filed:

Apr. 29, 2022
Applicant:

Globalfoundries U.s. Inc., Malta, NY (US);

Inventors:

George R. Mulfinger, Wilton, NY (US);

Md Nasir Uddin Bhuyian, Cohoes, NY (US);

Shesh Mani Pandey, Saratoga Springs, NY (US);

Adam S. Rosenfeld, Ballston Spa, NY (US);

Selina A. Mala, Ballston Spa, NY (US);

Assignee:

GlobalFoundries U.S. Inc., Malta, NY (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 86/01 (2025.01); H10D 62/10 (2025.01); H10D 62/13 (2025.01); H10D 64/01 (2025.01); H10D 86/00 (2025.01);
U.S. Cl.
CPC ...
H10D 86/01 (2025.01); H10D 62/116 (2025.01); H10D 62/151 (2025.01); H10D 64/018 (2025.01); H10D 64/021 (2025.01); H10D 86/201 (2025.01);
Abstract

Disclosed are a semiconductor structure and method of forming the structure. The structure has a semiconductor layer. A gate structure is located on the semiconductor layer. The gate structure has a sidewall spacer having a first section on the semiconductor layer and positioned laterally adjacent to the gate structure and further having a second section above and wider than the first section and positioned laterally adjacent the gate structure. A source/drain region is on the semiconductor layer and positioned laterally adjacent to the first section and the second section of the sidewall spacer.


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