The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 03, 2020

Filed:

Jan. 30, 2019
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Wei Hong, Clifton Park, NY (US);

George R. Mulfinger, Gansevoort, NY (US);

Hui Zang, Guilderland, NY (US);

Liu Jiang, Clifton Park, NY (US);

Zhenyu Hu, Clifton Park, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 29/66 (2006.01); H01L 21/8234 (2006.01); H01L 29/786 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0847 (2013.01); H01L 21/28132 (2013.01); H01L 29/6656 (2013.01); H01L 29/66568 (2013.01); H01L 29/7848 (2013.01);
Abstract

One illustrative method disclosed herein may include forming a first straight sidewall spacer adjacent a gate structure of a transistor, forming a recessed layer of sacrificial material adjacent the first straight sidewall spacer and forming a second straight sidewall spacer on a portion of the outer surface of the first straight sidewall spacer and above the recessed layer of sacrificial material. The method may also include removing the recessed layer of sacrificial material so as to expose a first vertical portion of the outer surface of the first straight sidewall spacer and forming an epi material on and above the substrate, wherein an edge of the epi material engages the first straight sidewall spacer.


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