IDiyas

For the Inventor, By the Inventor

Clifton Park, NY, United States of America

Wei Hong

USPTO Granted Patents = 21

Average Co-Inventor Count = 5.4

ph-index = 3

Forward Citations = 21(Granted Patents)


Company Filing History:

goldMedal15 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal6 out of 927 
 
Globalfoundries U.S. Inc.
 patents

Years Active: 2018-2022

where 'Filed Patents' based on already Granted Patents

21 patents (USPTO):
1. 11315835 - Methods of forming an IC product comprising transistor devices with different threshold voltage levels (2022-04-26),
2. 11239336 - Integrated circuit structure with niobium-based silicide layer and methods to form same (2022-02-01),
3. 11171036 - Preventing dielectric void over trench isolation region (2021-11-09),
4. 11164794 - Semiconductor structures in a wide gate pitch region of semiconductor devices (2021-11-02),
5. 11004953 - Mask-free methods of forming structures in a semiconductor device (2021-05-11),
6. 10957578 - Single diffusion break device for FDSOI (2021-03-23),
7. 10896853 - Mask-free methods of forming structures in a semiconductor device (2021-01-19),
8. 10825897 - Formation of enhanced faceted raised source/drain EPI material for transistor devices (2020-11-03),
9. 10811422 - Semiconductor recess to epitaxial regions and related integrated circuit structure (2020-10-20),
10. 10784342 - Single diffusion breaks formed with liner protection for source and drain regions (2020-09-22),
11. 10777642 - Formation of enhanced faceted raised source/drain epi material for transistor devices (2020-09-15),
12. 10756184 - Faceted epitaxial source/drain regions (2020-08-25),
13. 10714577 - Etch stop layer for use in forming contacts that extend to multiple depths (2020-07-14),
14. 10700173 - FinFET device with a wrap-around silicide source/drain contact structure (2020-06-30),
15. 10636894 - Fin-type transistors with spacers on the gates (2020-04-28),

Title: Innovator Profile: Wei Hong - A Leading Patentee in Integrated Circuit Technology

Introduction: Wei Hong, located in Clifton Park, NY, is an accomplished inventor with a remarkable portfolio of 21 patents. His innovative contributions primarily focus on integrated circuit (IC) technologies, providing significant advancements in semiconductor design and functionality.

Latest Patents: Wei's latest patents highlight his expertise in the formation and improvement of transistor devices. One notable patent, titled "Methods of forming an IC product comprising transistor devices with different threshold voltage levels," presents a sophisticated technique for fabricating conformal high-k gate insulation layers and metal-containing materials within replacement gate cavities. Another important patent, "Integrated circuit structure with niobium-based silicide layer and methods to form same," describes an IC structure featuring a niobium-based silicide layer that enhances the performance of transistors through optimized source/drain contact arrangements.

Career Highlights: Throughout his career, Wei has made significant technological advancements while working at prominent companies. Notably, he has held positions at GlobalFoundries Inc. and GlobalFoundries U.S. Inc., where he contributed to cutting-edge semiconductor technologies and helped drive innovation within the industry.

Collaborations: Wei's work has involved notable collaborations with talented professionals such as Hui Zang and Hsien-Ching Lo. Together, they have worked on various projects aimed at improving integrated circuit manufacturing and performance, showcasing the importance of teamwork in driving technological advances.

Conclusion: Wei Hong's dedication to innovation in the field of integrated circuits is exemplified through his numerous patents and collaborations. As technology continues to evolve, his contributions provide valuable insights and developments that shape the future of semiconductor technology and integrated circuit design.

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