The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2020
Filed:
Apr. 16, 2019
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Wei Hong, Clifton Park, NY (US);
Hong Yu, Clifton Park, NY (US);
Jianwei Peng, Clifton Park, NY (US);
Hui Zhan, Clifton Park, NY (US);
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0653 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/66795 (2013.01); H01L 29/7851 (2013.01);
Abstract
Structures that include a single diffusion break and methods of forming a single diffusion break. A source/drain region is arranged inside a first cavity in a semiconductor fin, and a dielectric layer is arranged inside a second cavity in the semiconductor fin. A liner, which is composed of a dielectric material, includes a section that is arranged inside the second cavity laterally between the dielectric layer and the source/drain region.