The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 02, 2021

Filed:

Aug. 04, 2019
Applicant:

Globalfoundries U.s. Inc., Santa Clara, CA (US);

Inventors:

Wei Hong, Clifton Park, NY (US);

Liu Jiang, Clifton Park, NY (US);

Yanping Shen, Saratoga Springs, NY (US);

Assignee:

GLOBALFOUNDRIES U.S. Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/823871 (2013.01); H01L 27/088 (2013.01); H01L 27/092 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/41775 (2013.01); H01L 29/4238 (2013.01);
Abstract

A semiconductor device is provided that includes an active region above a substrate, a first gate structure, a second gate structure, a first semiconductor structure, a second semiconductor structure and a semiconductor bridge. The first gate semiconductor and the second semiconductor structure are in the active region and between the first and the second gate structures. The first semiconductor structure is adjacent to the first gate structure and a second semiconductor structure is adjacent to the second gate structure. The semiconductor bridge is in the active region electrically coupling the first and the second semiconductor structures.


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